DRAM Revenue for 1Q21 Undergoes 8.7% Increase QoQ Thanks to Increased Shipment as Well as Higher Prices(TrendForce 2021-05-11)
Demand for DRAM exceeded expectations in 1Q21 as the proliferation of WFH and distance education resulted in high demand for notebook computers against market headwinds, according to TrendForce’s latest investigations. ……Taken together, these factors led to higher-than-expected shipments from various DRAM suppliers in 1Q21 despite the frequent shortage of such key components as IC and passive components. On the other hand, DRAM prices also entered an upward trajectory in 1Q21 in accordance with TrendForce’s previous forecasts. In light of the increases in both shipments and quotes, all DRAM suppliers posted revenue growths in 1Q21, and overall DRAM revenue for the quarter reached US$19.2 billion, an 8.7% growth QoQ.
Demand for PC, mobile, graphics, and special DRAM remains healthy in 2Q21. ……Some server manufacturers have now kicked off a new round of procurement as they expect a persistent increase in DRAM prices. TrendForce therefore forecasts a significant QoQ increase in DRAM ASP in 2Q21. In conjunction with increased bit shipment, this price hike will likely drive total DRAM revenue for 2Q21 to increase by more than 20% QoQ.
Rebounding DRAM prices were the primary revenue driver for major suppliers in 1Q21
DRAM suppliers will accelerate their capacity expansion plans in 2H21 in light of bullish DRAM demand
Taiwanese suppliers are dynamically adjusting their production capacities ahead of price hikes in the bullish specialty DRAM market
MCO 3.0 Lockdown in Malaysia, Hotspot for Packaging/Testing and Passive Component Manufacturing, Projected to Have No Effect on Semiconductor Companies(TrendForce 2021-06-02)
National governments in Southeast Asian countries, including Thailand, Vietnam, and Malaysia, have been instituting increasingly stringent pandemic control measures in response to the intensifying COVID-19 pandemic in these countries. Remarkably, these countries are all hotspots in the electronic component supply chain, and Malaysia, home to many semiconductor packaging and testing facilities as well as passive component fabs, has now come under the international spotlight as a result. In particular, Malaysia’s MCO 3.0 (Movement Control Order 3.0) lockdown, which was extended on June 1, specifically excludes the semiconductor industry, as this industry boasts relatively high market revenue. As such, packaging and testing facilities are currently operating normally in Malaysia, according to TrendForce’s latest investigations.
Memory Prices Likely to Continue Rising in 3Q21 as Suppliers Keep a Low Level of Inventory(TrendForce 2021-06-08)
Memory suppliers are currently carrying a relatively low level of inventory because of aggressive stock-up activities of clients across different application segments in 1H21, according to TrendForce’s latest investigations. More specifically, inventories of DRAM suppliers and NAND Flash suppliers are averaging 3-4 weeks and 4-5 weeks, respectively. The overall procurement of server memory products is expected to intensify in 3Q21, so memory suppliers do not see the necessity in lowering quotes to drive sales. TrendForce forecasts that DRAM prices will rise further by 3-8% QoQ for 3Q21. On the other hand, thanks to the growing demand for enterprise SSDs and NAND Flash wafers, TrendForce has also corrected up the magnitude of the QoQ increase in NAND Flash prices for 3Q21 to 5-10% (compared with the previous projection of 3-8%).
High inventory may pose potential risk for smartphone brands in 2H21 due to decreased smartphone production targets
PC OEMs are holding up to 10 weeks’ worth of DRAM inventory on average; price hike of PC DRAM in 2H21 will likely be limited as a result
受各终端买方于今年上半年积极备库存的带动，使得存储器原厂库存偏低，DRAM原厂平均库存仅3~4周；NAND Flash供应商平均库存则为4~5周。面对第三季服务器客户欲加强采购力道，原厂针对各类存储器产品报价并无降价求售的必要性，故TrendForce集邦咨询预估，第三季整体DRAM价格将续涨约3~8%；NAND Flash则受enterprise SSD及wafer需求攀升，整体价格季涨幅将由原先的3~8%，上调至5~10%。
PC OEM厂DRAM平均库存最高达10周，将收敛下半年PC DRAM涨幅
Samsung Electronics to Disclose DRAM Circuit Width Accurately(businesskorea 2021-05-06)
Samsung Electronics has decided to accurately disclose the circuit width of its DRAM products in a bid to get technology competition started among chipmakers.
Circuit width is considered to be a major measure of a semiconductor company’s technical skills. This is because the narrower a DRAM’s circuit width is, the higher its power efficiency is.……DRAM makers have not specified the circuit width of their DRAMs over the past five to six years. They dubbed the first-generation DRAMs in the 10nm node level, which were launched in 2016, as 1x, 2nd-generation products launched in 2018 as 1y and 3rd-generation products launched in the same year as 1z. In early 2021, fourth-generation 1a came out.
“Samsung Electronics is going to mass-produce 1a DRAM in the second half of 2021,” the company said, specifying the circuit width of the product as 14nm.
5月7日消息，由于质疑竞争对手的技术进展，三星决定公开自家DRAM产品的电路线宽，以显示三星在该领域的技术领先地位。据韩媒 BusinessKorea 报导，三星准备打破DRAM业界传统，将公布自家DRAM产品电路线宽。
上述报导指出，DRAM 电路线宽被业界认定为衡量存储器公司技术能力的重要指标，DRAM的电路线宽越窄，其功率效率就越高。 因此，过去DRAM业界的传统就是不明确公开相关产品的确切电路线宽。
Micron Ships First DRAM Manufactured on Its 1 Alpha Node(ExtremeTech 2021-06-03)
Micron has announced unit shipments for its first DRAM manufactured on the 1α (1 alpha) node. This new memory, which the company is building before it has deployed EUV for manufacturing, will offer a larger improvement in bit density and a modest decrease in power consumption.
Initially, 1α will be used for manufacturing DDR4 and LPDDR4. Over time, Micron expects to expand the use of the node to other products. The company is claiming a bit density improvement of 40 percent over products built using the 1z manufacturing node. Power consumption is said to have improved by “up to” 20 percent.
……What’s impressive is that Micron is moving to manufacture these new chips without the use of EUV.……Samsung uses EUV for its own 1Z manufacturing, but it dedicates less of its own production in percentage terms to 1Z than Micron does (6 percent versus 15 percent).
金泰克旗下KTQGR4AEE DDR4服务器专用内存获得美国先进认证实验室（Advanced Validation Labs，AVL）颁发的独立认证，验证该款产品适配并兼容Intel CPU及主板【Intel® 3rd Gen Intel® Xeon Scalable Processors Ice Lake-SP (ICX-SP) and Cooper Lake (CPX-SP)】。AVL是测试、认证内存产品的第三方专业机构，它与各大厂商建立联合机制，主要为全球主要代工厂和主板制造厂商提供测试与认证相关的技术性服务，被视为内存测试的权威机构。
Samsung Unveils Industry-First Memory Module Incorporating New CXL Interconnect Standard(Samsung 2021-05-11)
Samsung Electronics, the world leader in advanced memory technology, today unveiled the industry’s first memory module supporting the new Compute Express Link (CXL) interconnect standard. Integrated with Samsung’s Double Data Rate 5 (DDR5) technology, this CXL-based module will enable server systems to significantly scale memory capacity and bandwidth, accelerating artificial intelligence (AI) and high-performance computing (HPC) workloads in data centers.
CXL—an open, industry-supported interconnect based on the PCI Express (PCIe) 5.0 interface—enables high-speed, low latency communication between the host processor and devices such as accelerators, memory buffers and smart I/O devices, while expanding memory capacity and bandwidth well beyond what is possible today. Samsung has been collaborating with several data center, server and chipset manufacturers to develop next-generation interface technology since the CXL consortium was formed in 2019.
“This is the industry’s first DRAM-based memory solution that runs on the CXL interface, which will play a critical role in serving data-intensive applications including AI and machine learning in data centers as well as cloud environments,” said Cheolmin Park, vice president of the Memory Product Planning Team at Samsung Electronics. “Samsung will continue to raise the bar with memory interface innovation and capacity scaling to help our customers, and the industry at-large, better manage the demands of larger, more complex, real-time workloads that are key to AI and the data centers of tomorrow.”